Donor-acceptor interfaces for excitonic semiconductors
US12302680B2 · kind B2 · utility
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Key dates
| Filing date | Jun 7, 2019 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Jun 7, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided is a thin film semiconductor device that exploits excitonic characteristics of various organic semiconductor materials. The device may include an anode (120), a cathode (170), and a donor-acceptor heterojunction (150) disposed between the anode and the cathode. The donor-acceptor heterojunction may further include an acceptor material (404) having a highest occupied molecular orbital (HOMO) and a lowest unoccupied molecular orbital (LUMO), and a donor material (402) comprising a hybrid organic-inorganic metal halide perovskite semiconductor. Other embodiments are disclosed and additional embodiments are also possible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.