Thin film transistor and display apparatus including the same
US12302706B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2023 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Aug 31, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2320/043
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A thin film transistor, in one or more examples, includes a semiconductor layer, an upper gate electrode overlapped with the semiconductor layer, an upper insulating layer disposed between the semiconductor layer and the upper gate electrode, a first lower gate electrode overlapped with the semiconductor layer, a second lower gate electrode disposed between the semiconductor layer and the first lower gate electrode, overlapped with the semiconductor layer, and configured to have a width smaller than that of the upper gate electrode, a first lower insulating layer disposed between the first lower gate electrode and the second lower gate electrode, and a second lower insulating layer disposed between the second lower gate electrode and the semiconductor layer. A display apparatus including a thin film transistor is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.