Semiconductor device measurement method using x-ray scattering and semiconductor device manufacturing method including the measurement method
US12303307B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2023 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Oct 29, 2043 |
Classification
- Technology area (CPC A)Human Necessities
- CPC primaryA61B6/483
- WIPO fieldMedical technology
- WIPO sectorInstruments
Abstract
A semiconductor device measurement method using X-ray scattering includes preparing a semiconductor device including a repeat structure, irradiating X-rays onto the semiconductor device to obtain a first X-ray scattering image, calculating a second X-ray scattering image through simulation, the second X-ray scattering image corresponding to a target repeat structure for the semiconductor device, generating a repeat structure mask by analyzing a position of a signal for a regular repeat structure from the second X-ray scattering image, removing the repeat structure mask from the first X-ray scattering image and generating an error image; and analyzing the error image and calculating irregularities for the repeat structure of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.