Preparation method and analysis method of monolayer two-dimensional materials
US12306123B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2022 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Jan 14, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02568
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A preparation method of monolayer two-dimensional materials, including the following steps: providing a metal acetate dihydrate, with a general formula M(CH3COO)2·2H2O, in which M may be metal ion cadmium or zinc. Dissolving the metal acetate dihydrate in ethylene diamine and heating to 60° C. for two hours to form a metal cation precursor solution. Providing a chalcogen element powder, in which the chalcogen element powder is selected from sulfur, selenium, or tellurium. Dissolving the chalcogen element powder and sodium borohydride in ethylene diamine, and standing at room temperature for 24 hours to form a chalcogenide-amine precursor solution. Mixing the metal cation precursor solution with the chalcogenide-amine precursor solution to form a mixed solution. Transferring the mixed solution in a high temperature autoclave for reaction to form the monolayer two-dimensional materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.