Semiconductor photoresist composition and method of forming patterns using the composition
US12306534B2 · kind B2 · utility
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7References
14Claims
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Key dates
| Filing date | May 3, 2021 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Oct 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organic acid having a vapor pressure of less than or equal to about 1.0 mmHg at 25° C., and a pKa of about 3 to about 5, and a solvent. A method of forming photoresist patterns utilizes the composition
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.