Two-dimensional (2D) patterns using multiple exposures of one-dimensional (1D) photolithography masks or holographic interference lithography
US12306540B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Dec 13, 2022 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Aug 30, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70466
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Systems and methods are provided for generating a two-dimensional pattern on a photoresist layer. A photoresist layer is exposed via a first exposure to a first unidimensional series of features alternatingly providing first minima and maxima of illumination intensity along a first dimension. The photoresist layer is then exposed via a second exposure to a second unidimensional series of features alternatingly providing second minima and maxima of illumination intensity along a second dimension that is angularly separated from the second dimension by an exposure rotation factor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.