Patent · US Active

Memory management method, memory storage apparatus and memory control circuit unit

US12307101B1 · kind B1 · utility

0Cited by
0References
18Claims
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Assignee

Inventors

Key dates

Filing dateMar 15, 2024
Grant dateMay 20, 2025
Priority date
Expiry dateMar 15, 2044

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F3/0679
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory management method, a memory storage apparatus and a memory control circuit unit are disclosed. The method includes: sending a plurality of read command sequences including a first read command sequence and a second read command sequence, and the first read command sequence is configured to instruct a performing of a first read operation on a first physical unit of a rewritable non-volatile memory module, and the second read command sequence is configured to instruct a performing of a second read operation on the first physical unit; determining a system parameter according to a time interval between a first read time point corresponding to the first read operation and a second read time point corresponding to the second read operation; and instructing the rewritable non-volatile memory module to perform a specific operation according to the system parameter.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.