Method of processing substrate
US12308214B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Nov 14, 2022 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Aug 9, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3346
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
There is provided a method of processing a substrate comprising an ONO stack in which a silicon oxide layer and a silicon nitride layer are stacked alternately and repeatedly on the substrate. The method includes: (a) primarily dry-etching silicon nitride layers of the ONO stack; (b) producing oxygen radicals and processing silicon oxide layers of the ONO stack with the oxygen radicals; and (c) secondarily dry-etching the silicon nitride layers of the ONO stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.