Method for controlling surface characteristics and thickness of multilayer transition metal dichalcogenide thin film
US12308231B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2023 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Aug 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment relates to a method for controlling the surface characteristics and thickness of a multilayer transition metal dichalcogenide thin film. By forming an amorphous transition metal oxide thin film on a multilayer transition metal dichalcogenide thin film, and then treating the multilayer transition metal dichalcogenide thin film having the amorphous transition metal oxide thin film formed thereon with an aqueous solution of ammonium sulfide at least once, the surface characteristics and thickness of the transition metal dichalcogenide can be controlled in a simple and low-cost manner without complex equipment settings for heat treatment, plasma and laser etching, and so on.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.