Epitaxial growth method for FDSOI hybrid region
US12308232B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2023 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Oct 23, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D87/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present application discloses an epitaxial growth method for an FDSOI hybrid region, comprising: step 1, providing an FDSOI substrate structure; step 2, forming a trench; step 3, performing first isotropic epitaxial growth, wherein a top surface of a first semiconductor epitaxial sublayer is located in a plane between a top surface and a bottom surface of a dielectric buried layer, and a second semiconductor epitaxial sublayer comprise a lateral protruding structure on the side face of the semiconductor top layer; and step 4, performing second epitaxial growth having a growth rate of the first crystalline face, which is greater than a growth rate of the second crystalline face, wherein the third semiconductor epitaxial sublayer has a chamfered recess near the side face of the semiconductor top layer, finally the lateral protruding structure is located in the chamfered recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.