Method of processing substrate having silicon nitride layer
US12308243B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2022 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Nov 21, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02126
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a substrate processing method for selectively etching a silicon nitride layer on a substrate on which silicon oxide layers and silicon nitride layers are alternately stacked, the method including plasma etching the silicon nitride layers using plasma of a plurality of gases, wherein the plurality of gases include a first gas containing fluorine excluding nitrogen trifluoride (NF3) and a second gas containing hydrogen, and the etch profile in the thickness direction of the silicon nitride layers is controlled by adjusting the atomic ratio of fluorine to hydrogen included in the plurality of gases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.