Method for obtaining parameters of semiconductor structure, method for obtaining detection standard and detection method
US12308295B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2021 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Sep 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure provide a method for obtaining parameters of a semiconductor structure, a method for obtaining a detection standard and a detection method. The method for obtaining parameters of a semiconductor structure includes: obtaining a semiconductor structure, the semiconductor structure including a substrate and a capacitor support structure on the substrate, the capacitor support structure having a plurality of capacitor holes therein, the capacitor holes penetrating the capacitor support structure in a thickness direction of the capacitor support structure; removing some height of the capacitor support structure; obtaining a test pattern, the test pattern being a pattern exposed at a top of the remaining capacitor support structure; and in the test pattern, obtaining a spacing between the capacitor holes at predetermined positions on the basis of a predetermined direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.