Light emitting diode component and light emitting diode circuit comprising p-n diodes in series
US12308351B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Apr 19, 2022 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Sep 11, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a light emitting diode component, including a body and a plurality of P-N diode structures. The P-N diode structures are coupled in series and integrated on the body. The P-N diode structures include a plurality of p-type doping layers and a plurality of n-type doping layers. The p-type doping layer of a first P-N diode structure in the P-N diode structures is electrically coupled to the n-type doping layer of a second P-N diode structure in the P-N diode structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.