Thin film structure including method of manufacturing
US12308365B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2022 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Sep 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/377
Abstract
Provided are a thin film structure, a capacitor including the thin film structure, a semiconductor device including the thin film structure, and a method of manufacturing the thin film structure, in which the thin film structure may include: a first electrode thin film disposed on a substrate and including a first perovskite-based oxide; and a protective film disposed on the first electrode thin film and including a second perovskite-based oxide that is oxygen-deficient and includes a doping element. The thin film structure may prevent the deterioration of conductivity and a crystalline structure of a perovskite-based oxide electrode, which is a lower electrode, even in a high-temperature oxidizing atmosphere for subsequent dielectric film deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.