Semiconductor structure and method for fabricating same

US12309997B2 · kind B2 · utility

Assignees

• CHANGXIN MEMORY TECHNOLOGIES, INC. · CN
• BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY · CN

Inventors

• Guangsu SHAO · Hefei, CN
• Deyuan Xiao · Shanghai, CN
• Weiping BAI · Hefei, CN
• Yunsong QIU · Hefei, CN

Key dates

• Filing date: Aug 1, 2022
• Grant date: May 20, 2025
• Expiry date: Dec 2, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/482

Abstract

Embodiments provide a semiconductor structure and a fabrication method thereof. The fabrication method includes: providing a substrate including a plurality of semiconductor layers arranged at intervals and an isolation layer positioned between adjacent two of the plurality of semiconductor layers, a given one of the plurality of semiconductor layers and the isolation layer being internally provided with trenches, and each of the trenches including a first region, a second region and a third region sequentially distributed; forming a sacrificial layer on an inner wall of the trench in the first region and the second region; forming an insulating layer filling up the trench on a surface of the sacrificial layer; removing the sacrificial layer in the second region, and removing the isolation layer of a first thickness to form voids surrounding the given semiconductor layer.