Semiconductor structure and method of forming the same
US12310050B2 · kind B2 · utility
0Cited by
11References
20Claims
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Key dates
| Filing date | Sep 24, 2021 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Jul 11, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a gate structure on a semiconductor fin, a dielectric layer on the gate structure, and a gate contact extending through the dielectric layer to the gate structure. The gate contact includes a first conductive material on the gate structure, a top surface of the first conductive material extending between sidewalls of the dielectric layer, and a second conductive material on the top surface of the first conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.