Semiconductor device and electronic device

US12310059B2 · kind B2 · utility

Assignee

• WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. · CN

Inventors

• Zhifu Li · 红钢城街道, CN
• Guanghui Liu · Hubei, CN
• Fei AI · 红钢城街道, CN
• Dewei Song · 红钢城街道, CN

Key dates

• Filing date: Oct 28, 2022
• Grant date: May 20, 2025
• Expiry date: Oct 5, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/235

Abstract

A semiconductor device and an electronic device are provided. The semiconductor device includes an insulating substrate, and a non-planar layer disposed on the insulating substrate and including a non-planar structure. The non-planar structure includes a sidewall. An active pattern is configured with at least a part located on the sidewall of the non-planar structure. The active pattern includes a channel located on the sidewall. A ratio of a size of the non-planar structure in a thickness direction of the non-planar layer to a thickness of the active pattern is less than or equal to seven.