Silicon carbide semiconductor device, power conversion apparatus, and method for manufacturing silicon carbide semiconductor device
US12310076B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2019 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Jan 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide semiconductor device includes: a body region of a second conductivity type provided on a drift layer of a first conductivity type; a source region of a first conductivity type provided on the body region; a source electrode connected to the source region; a gate insulating film provided on an inner surface of a trench; a gate electrode provided inside the trench with interposition of the gate insulating film; a protective layer of a second conductivity type provided below the gate insulating film; a connection layer of a second conductivity type being in contact with the protective layer and the body region; and an electric field relaxation layer of a second conductivity type being in contact with a bottom surface of the connection layer, provided below the connection layer, and having a lower impurity concentration of a second conductivity type than the connection layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.