Infrared photodetector based on van der waals heterostructure and preparation method thereof

US12310126B2 · kind B2 · utility

Assignee

• Shanghai Institute of Technical Physics Chinese Academy of Sciences · CN

Inventors

• Fang Wang · Foster City, US
• Fuxing Dai · Shanghai, CN
• Weida Hu · Shanghai, CN
• Xiaoshuang Chen · Shanghai, CN
• Wei Lu · Ann Arbor, US

Key dates

• Filing date: Nov 21, 2022
• Grant date: May 20, 2025
• Expiry date: Jan 16, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/206

Abstract

The present disclosure relates to an infrared photodetector based on a van der waals heterostructure and a preparation method thereof. The infrared photodetector comprises a fully depleted van der waals heterostructure. The fully depleted van der waals heterostructure comprises a first n-type two-dimensional semiconductor layer, a p-type two-dimensional semiconductor layer, and a second n-type two-dimensional semiconductor layer which are sequentially provided from bottom to top. A fully depleted built-in electric field is formed by means of a sandwich structure including the first n-type two-dimensional semiconductor layer, the p-type two-dimensional semiconductor layer and the second n-type two-dimensional semiconductor layer, which can improve the light absorption efficiency while reducing the dark current of a device, and the separation rate and collection efficiency of photo-induced carriers are accelerated.