Patent · US Active

Mini light-emitting diode chip having an extended electrode facing away from a growth substrate and manufacturing method thereof

US12310153B2 · kind B2 · utility

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1References
20Claims
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Key dates

Filing dateJun 3, 2022
Grant dateMay 20, 2025
Priority date
Expiry dateSep 15, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/856

Abstract

A mini LED chip and a manufacturing method thereof are provided. The mini LED chip includes a growth substrate and a light-emitting epitaxial layer including a first type semiconductor layer, a luminous layer, and a second type semiconductor layer. The second type semiconductor layer and the luminous layer include an electrode contact hollow part that exposes the first type semiconductor layer. Further, the mini LED chip includes a transparent conductive layer disposed on a side of the second type semiconductor layer facing away from the growth substrate, an extended electrode disposed on a side of the transparent conductive layer facing away from the growth substrate, an insulating and isolating reflection layer covering the electrode contact hollow part and an exposed surface of the transparent conductive layer and the extended electrode facing away from the growth substrate, and a first bonding electrode and a second bonding electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.