Integrated structure for an optoelectronic device and method of fabricating the same
US12310159B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2020 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Oct 16, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated structure for an optoelectronic device and a method of fabricating an integrated structure for an optoelectronic device. The method comprises the steps of providing a complementary metal-oxide-semiconductor, CMOS, backplane comprising a driver circuit for the optoelectronic device; and providing a plurality of optical elements on the CMOS backplane, wherein the plurality of optical elements are based on a material system different from CMOS and are disposed in different device layers; wherein a first bonding dielectric is provided between the CMOS backplane and a first one of the different device layers for monolithic integration; and wherein a second bonding dielectric is provided between respective ones of the different device layers for monolithic integration, the second bonding dielectric being transparent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.