Magnetic domain wall movement element and magnetic array
US12310253B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2022 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Aug 6, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
Abstract
A magnetic domain wall movement element includes a magnetoresistance effect part, a first electrode, a second electrode, a third electrode, a first magnetization fixed layer, and a second magnetization fixed layer. The magnetoresistance effect part includes a reference layer, a magnetic domain wall movement layer, and a non-magnetic layer. The magnetic domain wall movement layer has a first region and second region in which a magnetization direction is fixed, and a third region in which a magnetization direction is variable. The reference layer overlaps at least part of the first region and the second region in a plan view in a first direction, and at least part of the first region and the second region is shorter than the third region in a third direction orthogonal to the first direction and the second direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.