Method for chemical mechanical polishing of a SiC wafer based on a magnetorheological elastic metal contact corrosion polishing pad
US12311497B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2024 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Dec 18, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30625
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method for chemical mechanical polishing of a SiC wafer based on a magnetorheological elastic metal contact corrosion polishing pad, including following steps of: attaching a magnetorheological elastic metal contact corrosion polishing pad to a polishing disk adding an electrolyte solution onto the magnetorheological elastic metal contact corrosion polishing pad; wherein the electrolyte solution is non-corrosive, the electrolyte solution is added between the SiC wafer and the magnetorheological elastic metal contact corrosion polishing pad; applying a polishing magnetic field to the magnetorheological elastic metal contact corrosion polishing pad to control the contact state of the abrasive and metal powders on the SiC wafer; to achieve a control over a chemical reaction intensity of the metal powders on a SiC wafer surface in the electrolyte solution, and to achieve a mechanical removal of materials from the SiC wafer surface via the abrasive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.