Plasma enhanced chemical vapor deposition of graphene on optical fibers
US12312680B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2022 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Jun 26, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of growing one or more graphene sheets on one or more regions of an optical fiber using plasma-enhanced chemical vapor deposition (PECVD) includes placing the optical fiber in a growth chamber, placing one or more carbon-containing precursors in the growth chamber, forming a reduced pressure in the growth chamber, and flowing methane gas and hydrogen gas into the growth chamber. The method also includes generating a plasma in the growth chamber, forming a gaseous carbon-containing precursor from the one or more carbon-containing precursors, exposing the one or more regions of the optical fiber to the methane gas, the hydrogen gas, the gaseous carbon-containing precursor, and the plasma, and forming the one or more graphene sheets on the one or more regions of the optical fiber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.