Method of manufacturing polycrystalline silicon rod
US12312691B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2020 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Mar 3, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4418
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a method of manufacturing a polycrystalline silicon rod suitable as a raw material for manufacturing monocrystalline silicon by a FZ process. The method of manufacturing a polycrystalline silicon rod according to the present invention is a method of manufacturing a polycrystalline silicon rod by Siemens process, and includes a post-deposition energization step of, after an end of a deposition step of polycrystalline silicon, performing energization under a condition that provides a skin depth D shallower than a skin depth D0 provided at a time when the deposition step ends. For example, the post-deposition energization step is performed by passage of current at a frequency f higher than a frequency f0 of current that is passed at a time when the deposition step ends.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.