Leakage testing structure and leakage testing method
US12313679B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2022 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Feb 8, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/3008
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An electrical leakage test structure and an electrical leakage testing method are disclosed. The electrical leakage test structure comprises: a substrate; a first well region and a second well region, which are both formed in the substrate; a first shallow trench isolation structure formed between the second and first well regions; a first source/drain region formed in the first well region; a plurality of second source/drain regions formed in the second well region; and a test gate formed on the substrate. In the electrical leakage testing method, a plurality of electrical leakage test structures with different designed dimensions are tested to perform leakage current evaluation on each electrical leakage test structure, and a designed dimension vs. leakage current relationship is developed based on the leakage current evaluation on each electrical leakage test structure, which reflects whether the internal design of a corresponding semiconductor device is associated with any problem such as parasitic leakage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.