Grin lens structure in micro-LED devices
US12313859B1 · kind B1 · utility
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16Claims
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Key dates
| Filing date | Feb 3, 2022 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Nov 22, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2003/0093
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A GaN layer of micro-LEDs is exposed to ion implantation to amorphize one or more regions of the GaN layer. As a result, the GaN layer through which light rays propagate have non-uniform refractive indexes that modify propagation paths of some light rays. Ions are implanted in a region overlapping an active region that emits light to function as a converging GRIN (gradient-index) lens. The ion implanted regions collimate light rays that propagate along predetermined directions. As such, the light extraction from and the focus of the micro-LEDs is increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.