Touch electrode architecture for high-transmittance touch screen
US12314520B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2023 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Feb 24, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2203/04112
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Touch electrode architecture techniques can be used to reduce or eliminate metal mesh within the one or more high-transmittance regions of a touch screen including one or more high-transmittance regions. In some examples, one or more optical devices can be integrated with a touch screen such that light associated with the one or more optical devices passes through one or more layers of the touch screen. In some such examples, to avoid degrading performance of the optical devices, one or more high-transmittance regions can be used. Additionally or alternatively, in some examples, the high-transmittance can be achieved using touch electrode architecture techniques that use transparent or semi-transparent materials instead of opaque metal mesh within the high-transmittance regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.