Cryogenic memory cell and memory device
US12315543B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2020 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Nov 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/1952
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A cryogenic memory cell and a memory device are provided. The cryogenic memory cell includes a spin moment transfer device. The spin moment transfer device converts a write current into a spin polarization current and changes a magnetic polarization direction under the action of the spin polarization current to achieve write storage of 0 and 1. The cryogenic memory cell also includes a nano-superconducting quantum interference device; a ground terminal of the nano-superconducting quantum interference device is in common-ground connection with a ground terminal of the spin moment transfer device, and the nano-superconducting quantum interference device undergoes a magnetic flux change under the action of a change in the magnetic polarization direction of the spin moment transfer device, thereby switching between a superconducting state and a non-superconducting state under a read current bias, to achieve read-out of 0 and 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.