Method for finding common optimal reference voltage and memory storage system
US12315584B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2023 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Nov 27, 2043 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
This application relates to the technical field of data storage, and discloses a method for finding a common optimal reference voltage and a memory storage-system. The method includes: providing a lookup table for optimal reference voltage offset of each programmed state of target memory and a 1-bit count difference voltage offset corresponding to predetermined 1-bit count index at different time intervals; when there is a NAND device of a memory storage system with UECC or bit error rate exceeding criteria, detecting current 1-bit count difference voltage offset corresponding to the predetermined 1-bit count index, and obtaining optimal reference voltage offset in the lookup table with the current 1-bit count difference voltage offset as index; and applying the corresponding reference voltage offset to initial common reference voltage of all NAND devices of the memory storage system. This application can accurately adjust the reference voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.