Patent · US Active

Word line driver, word line driver array, and semiconductor structure

US12315596B2 · kind B2 · utility

0Cited by
3References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 12, 2023
Grant dateMay 27, 2025
Priority date
Expiry dateJul 14, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/85
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Embodiments of the present disclosure provide a word line driver, a word line driver array, and a semiconductor structure, relating to the technical field of semiconductors. The word line driver includes: a zeroth P-channel metal oxide semiconductor (PMOS) transistor, a zeroth N-channel metal oxide semiconductor (NMOS) transistor, and a first NMOS transistor, the zeroth PMOS transistor being provided with a gate connected to a gate of the first NMOS transistor and configured to receive a first control signal, a source configured to receive a second control signal, and a drain connected to a drain of the first NMOS transistor, the zeroth NMOS transistor being provided with a gate configured to receive a second control complementary signal, and a drain of the zeroth NMOS transistor and the drain of the first NMOS transistor being configured to be connected to a word line.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.