Packaged transistor amplifiers that include integrated passive device matching structures having distributed shunt inductances
US12315829B2 · kind B2 · utility
0Cited by
4References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2021 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Nov 5, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A packaged RF transistor amplifier includes an RF transistor amplifier die having a first terminal, a first lead, an integrated passive device that includes a first series microstrip transmission line, a first bond wire coupled between the first terminal and the first series microstrip transmission line, and a second bond wire coupled between the first series microstrip transmission line and the first lead.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.