Light-emitting diode display device and manufacturing method thereof
US12315865B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Sep 21, 2021 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Feb 8, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2654
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A display device includes an ion implantation region, a first semiconductor layer, an active layer under the first semiconductor layer, and a second semiconductor layer under the active layer. The ion implantation region includes a plurality of ions and partitions the active layer into a plurality of light-emitting regions, and an average ion concentration ratio of each of the light-emitting regions is 2 to 15.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.