Protection circuit for high temperature reverse bias test
US12316099B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2022 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Jun 28, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2642
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure provides a protection circuit for protecting an electronic device under a high temperature reverse bias (HTRB) test, the protection circuit comprising: a switch configured to connect/disconnect the protection circuit to/from the electronic device based on a switching signal; a current-sensing circuit configured to sense a drain-source leakage current flowing through a drain-source junction of the electronic device and generate a current-sensing signal; and a driving circuit configured to receive the current-sensing signal from the current-sensing circuit and generate a driving signal for switching on/off the switch such that the drain-source leakage current is blocked by the switch when the current-sensing signal is higher than a reference voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.