Semiconductor memory device
US12317499B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2022 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Sep 15, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A semiconductor memory device includes a semiconductor layer extending in a first direction, a conductive layer opposed to the semiconductor layer in a second direction intersecting with the first direction, an electric charge accumulating layer disposed between the semiconductor layer and the conductive layer, a first insulating layer disposed between the semiconductor layer and the electric charge accumulating layer, and a second insulating layer disposed between the conductive layer and the electric charge accumulating layer. The semiconductor layer includes at least one protrusion protruding in the second direction toward the electric charge accumulating layer. A position in the first direction of the protrusion is inside with respect to corner portions at both ends in the first direction of a surface opposed to the semiconductor layer in the electric charge accumulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.