Semiconductor switching device

US12317558B2 · kind B2 · utility

Assignee

• GE Aviation Systems Limited · GB

Inventors

• Collin William Hitchcock · Clifton Park, US
• Stacey Joy Kennerly · Niskayuna, US
• Ljubisa D. Stevanovic · Clifton Park, US

Key dates

• Filing date: Mar 11, 2022
• Grant date: May 27, 2025
• Expiry date: Sep 5, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/235

Abstract

A semiconductor device cell includes a drift region having a first conductivity type, a well region having a second conductivity type disposed adjacent to the drift region, the well region defining a set of well region segments. A source region having the first conductivity type is disposed adjacent to the well region and surrounded by the well region. A channel region having the second conductivity type, and defining a set of channel region segments a periphery of the channel region segment being surrounded by the well region. The well region, source region, and channel region cooperatively define a first axial length extending across the surface.