Radiation hardened infrared focal plane array
US12317633B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2022 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Apr 26, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/13109
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An FPA includes a substrate; a plurality of spaced-apart implant regions deposited in the substrate; a plurality of supplemental metal contacts, one supplemental metal contact of the plurality of supplemental metal contacts electrically connected to one implant region of the plurality of implant regions; a plurality of metal conductors electrically connecting the plurality of supplemental metal contacts; and a primary metal contact, electrically connected to the plurality of supplemental metal contacts by at least one of the metal conductors of the plurality of metal conductors. The pixel can include an Indium bump electrically connected to the primary metal contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.