Patent · US Active

Z-type heterojunction composite material of tungsten oxide nanorod/titanium carbide quantum dot/indium sulfide nanosheet, preparation method therefor and application thereof

US12318763B2 · kind B2 · utility

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Key dates

Filing dateJun 17, 2021
Grant dateJun 3, 2025
Priority date
Expiry dateJun 20, 2042

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC02F2305/10
  • WIPO fieldChemical engineering
  • WIPO sectorChemistry

Abstract

Disclosed are a Z-type heterojunction composite material of a tungsten oxide nanorod/a titanium carbide quantum dot/an indium sulfide nanosheet, a preparation method therefor and an application thereof. The method includes: preparing a titanium carbide quantum dot by using freeze-thaw and ultrasound methods for multiple times, and then placing a tungsten trioxide nanorod prepared by a hydrothermal method into a titanium carbide quantum dot aqueous solution, stirring same, and then standing same to obtain a tungsten oxide nanorod loading a quantum dot; stirring and uniformly mixing an indium compound and a sulfur compound in an ethylene glycol solvent, and then adding the tungsten oxide nanorod loading the quantum dot, and performing a reflux reaction at constant temperature to obtain the composite material. The titanium carbide quantum dot of the present invention can provide good electron transport channels at different semiconductor interfaces.

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