High purity ethylenediamine for semiconductor applications
US12319637B2 · kind B2 · utility
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3References
11Claims
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Key dates
| Filing date | Jun 30, 2021 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Mar 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67017
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
A method for making the EDA that is suitable for use in thin-film semiconductor processing applications, are disclosed. The EDA is purified to remove water and trace metals. Water levels below about 50 ppm by weight are achieved by passing liquid through 3A type molecular sieve in a packed bed. Metallic impurities are removed by distillation and the resulting product is packaged in specially dried and optionally pre-conditioned containers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.