Enhanced directed self-assembly in the presence of low Tg oligomers for pattern formation
US12319810B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2020 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Feb 26, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08L2205/03
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
The present invention relates to a composition comprising components a), b) and c). The component a) is a block copolymer or a blend of block copolymers. The component b) is a low Tg additive selected from the group consisting of an oligo random oligo random copolymer b-1), an oligo diblock copolymer b-2), an oligo diblock copolymer b-3) and a mixture of at least two of these. The component c) is a is a spin casting organic solvent. The invention also pertains to the use of said compositions in directed self-assembly. The invention further pertains to the novel oligo diblock copolymer b-2) which is an oligo diblock copolymer of block A-b) and block B-b), wherein block A-b) is a random copolymer of repeat units having structures (III), and (IV and block B-b) is a random copolymer of repeat units having structures (V), and (VI).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.