Etchant composition for indium oxide film or silver-containing metal film and method for preparing the same
US12319860B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Nov 25, 2022 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Jul 28, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F1/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An etchant composition is disclosed that provides selective etching of an indium oxide film or a sliver-containing metal layer. The etchant composition includes nitric acid, an organic acid, a sulfur compound, and a tin compound. The organic acid does not include the elements of sulfur and tin. The sulfur compound does not include the element of tin. The etchant composition may minimize the damage of a lower metal film and may exhibit excellent etching characteristics in terms of etching rate, bias, residue, precipitation, and etching uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.