Ferroelectric thin film and forming method thereof
US12320032B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Mar 30, 2023 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Oct 19, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/68
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A ferroelectric thin film and a forming method thereof are provided. The method of forming a ferroelectric thin film according to embodiments of the present invention comprises forming a sacrificial seed layer on a first substrate, forming a ferroelectric thin film on the sacrificial seed layer, and transferring the ferroelectric thin film to a second substrate. The ferroelectric thin film according to embodiments of the present invention is formed by the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.