Semiconductor devices and methods
US12322647B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2022 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Oct 12, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/015
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and methods of manufacture are presented herein in which a etch stop layer is selectively deposited over a conductive contact. A dielectric layer is formed over the etch stop layer and an opening is formed through the dielectric layer and the etch stop layer to expose the conductive contact. Conductive material is then deposited to fill the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.