Optoelectronic device manufacturing method
US12322741B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | May 10, 2022 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Sep 5, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/8513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing an optoelectronic device, including the steps of: a) arranging an active photosensitive diode stack on a first substrate; b) transferring the active photosensitive diode stack onto an integrated control circuit previously formed inside and on top of a second semiconductor substrate, and then removing the first substrate; c) arranging an active light-emitting diode stack on a third substrate; and d) after steps b) and c), transferring the active light-emitting diode stack onto the active photosensitive diode stack, and then removing the third substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.