Bulk acoustic wave resonator and fabrication method for the bulk acoustic wave resonator
US12323120B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2021 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Jul 27, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/021
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Disclosed are a bulk acoustic wave resonator and a fabrication method for the bulk acoustic wave resonator. The fabrication method includes: preparing a cavity with a top opening on a first silicon wafer; preparing an insulating layer on an upper surface of a second silicon wafer, and preparing a resonant piezoelectric stack on an upper surface of the insulating layer; preparing a first silicon dioxide layer on an upper surface of the resonant piezoelectric stack; bonding a surface where the top opening of the cavity is located with an upper surface of the first silicon dioxide layer; and preparing a lead out pad of the first electrode and the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.