Capacitor structure and manufacturing method thereof
US12324170B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2022 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Aug 3, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/01
Abstract
A capacitor structure including a silicon material layer, a support frame layer, and a capacitor is provided. The support frame layer is disposed in the silicon material layer. The support frame layer has recesses. There is a cavity between two adjacent recesses. The support frame layer is located between the cavity and the recess. The support frame layer has a through hole directly above the cavity. The capacitor is disposed in the silicon material layer. The capacitor includes a first insulating layer and a first electrode layer. The first insulating layer is disposed on the support frame layer. The first electrode layer is disposed on the first insulating layer and fills the recess and the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.