Display apparatus having an oxide semiconductor pattern
US12324239B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2023 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Dec 26, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
Abstract
A display apparatus can include a buffer layer on a flexible substrate; a first thin film transistor on the buffer layer including a first semiconductor pattern, a first gate electrode, a first source electrode and a first drain electrode, a second thin film transistor including a second semiconductor pattern, a second gate electrode, a second source electrode and a second drain electrode, and a passivation layer on the first and the second thin film transistors. Also, the display apparatus includes a planarization layer, a light-emitting device including a first electrode, a light-emitting layer and a second electrode on the planarization layer, and an encapsulating element on the light-emitting device. Also, the light-emitting device is electrically connected to the first thin film transistor, the first semiconductor pattern includes silicon, and the second semiconductor pattern includes an oxide semiconductor pattern, and the second gate electrode includes lower and upper electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.