Patent · US Active

Optoelectronic semiconductor chip and method for producing optoelectronic semiconductor chips

US12324274B2 · kind B2 · utility

0Cited by

1References

20Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Xiaojun Chen · Shanghai, CN
Heng Wang · Bao'an District, CN
Jong Ho Na · Seoul, KR
Alvaro Gomez-Iglesias · Regensburg, DE
Jürgen Off · Regensburg, DE
Philipp Drechsel · Regensburg, DE
Thomas Lehnhardt · Regensburg, DE

Key dates

Filing date	Oct 6, 2020
Grant date	Jun 3, 2025
Priority date	—
Expiry date	Dec 22, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/825
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence including a first semiconductor region of a first conductivity type, an active zone having a multiple quantum well structure composed of a plurality of quantum well layers and barrier layers, a second semiconductor region of a second conductivity type and a plurality of channels extending through the active zone, wherein the second semiconductor region is located in the channels and is configured for lateral current injection into the active zone, wherein the channels have a first aperture half-angle in the first semiconductor region and a second aperture half-angle in the active zone, and wherein the second aperture half-angle is greater than zero and less than the first aperture half-angle.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.