Patent · US Active

Growth structure for a radiation-emitting semiconductor component, and radiation-emitting semiconductor component

US12324275B2 · kind B2 · utility

0Cited by

3References

16Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Andreas Koller · Regensburg, DE
Bernd Mayer · Graz, AT

Key dates

Filing date	Feb 21, 2020
Grant date	Jun 3, 2025
Priority date	—
Expiry date	Sep 11, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2301/173
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an embodiment a growth structure for a radiation-emitting semiconductor component includes a semiconductor substrate containing a material based on arsenide compound semiconductors and a buffer structure arranged on the semiconductor substrate, wherein the buffer structure includes a buffer layer having at least one n-doped layer and wherein the n-doped layer contains oxygen, and a molar fraction of oxygen in the n-doped layer is between 1015 cm−3 and 1019 cm−3, inclusive.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.