Patent · US Active

Contaminated interface mitigation in a semiconductor device

US12324301B2 · kind B2 · utility

0Cited by

1References

8Claims

0Family size

Assignee

IMEC VZW · BE

Inventors

Tung Huei Ke · Leuven, BE
David Cheyns · Heffen, BE
Pawel Malinowski · Overijse, BE

Key dates

Filing date	Oct 15, 2021
Grant date	Jun 3, 2025
Priority date	—
Expiry date	Jan 18, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH10K85/6572
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A semiconductor device comprises a substrate, a first hole-transporting layer over the substrate, a first electron-transporting layer on the first hole-transporting layer, and a second hole-transporting layer over the first electron-transporting layer. At least one of the first electron-transporting layer and the second hole-transporting layer has an organic component. The device is characterized by one of the following: a metal oxide layer present on the first electron-transporting layer, wherein a second electron-transporting layer is on the metal oxide layer, wherein the second hole-transporting layer is on the second electron-transporting layer, or the second hole transporting layer has a first p-doped hole-transporting surface present on the first electron-transporting, layer and a second p-doped hole-transporting surface facing away from the first p-doped hole-transporting surface, or the first electron-transporting layer is on a top surface and on sidewalls of the first hole-transporting layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.